BFQ790
High Linearity RF Medium Power Amplifier
Product description
The BFQ790 is a single stage high linearity high gain driver amplifier based on Infineon's reliable and cost
effective NPN silicon germanium technology. Not internally matched, the BFQ790 provides flexibility in high
linearity applications.
Features
•
•
•
•
•
•
•
High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850 MHz and
2650 MHz Class A application circuits
High compression point OP1dB of 27 dBm @ 5 V, 250 mA corresponding to 40%
collector efficiency
High power gain of 17 dB @ 5V, 250 mA in 1850 MHz Class A application circuit
Exceptional ruggedness up to VSWR 10:1 at output
High maximum RF input power PRFinmax of 18 dBm
100% test of proper die attach for reproducible thermal contact
100% DC and RF tested
Applications
As
•
In
•
•
•
•
•
•
high linear pre-driver amplifier, driver amplifier or power amplifier in the RF transmit chain
Commercial / industrial wireless infrastructure
ISM band wireless sensors
Internet of Things
Smart metering
Automotive radio links
Solid state Microwace ovens
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Device Information
Table 1
Device Information
Product Name / Ordering Code
Package
Pin Configuration
BFQ790 / BFQ790H6327XTSA1
SOT89
1=B
Preliminary Datasheet
www.infineon.com
2=E
Marking
3=C
Please read the Important Notice and Warnings at the end of this document
R3
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Table of contents
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Device Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
4
4.1
4.2
4.3
4.4
Electrical Performance in Test Fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
DC Parameter Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
AC Parameter Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6
Package Information SOT89 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Preliminary Datasheet
2
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Absolute Maximum Ratings
1
Absolute Maximum Ratings
Table 2
Absolute Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min.
Unit
Note or Test Condition
Max.
Collector emitter voltage
VCE
–
–
6.1
5.1
V
TA = 25°C
TA = 40°C
Collector base voltage
VCB
–
18
V
–
Instantaneous total base emitter
reverse voltage
VBE
-2.0
–
V
DC + RF swing
Instantaneous total collector current iC
–
600
mA
DC + RF swing
DC collector current
IC
–
300
mA
–
DC base current
IB
–
10
mA
–
RF input power
PRFin
–
18
dBm
In- and output matched
Mismatch at output
VSWR
–
10:1
ESD stress pulse
VESD
-500
500
V
HBM, all pins, acc. to ANSI /
ESDA / JEDEC JS-001-2012
Dissipated power
PDISS
–
1500
mW
TS ≤ 112.5 °C1), regard
derating curve in Figure 1.
Junction temperature
TJ
–
150
°C
–
°C
–
°C
–
Operating case temperature
TA
-40
1052)
Storage temperature
TStg
-55
150
In compression, over all
phase angles
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the component.
1
2
TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
At the same time regard TJ,max.
Preliminary Datasheet
3
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Recommended Operating Conditions
2
Recommended Operating Conditions
This following table shows examples of recommended operating conditions. As long as maximum ratings are
regarded operation outside these conditions is permitted, but increases failure rate and reduces lifetime. For
further information refer to the quality report available on the BFQ790 internet page.
Table 3
Recommended Operating Conditions
Operating
Mode
Ambient Collector
Temperat Current
ure1)
DC
Power2)
RF Output Efficiency Dissipate Thermal Junction
4)
Power3)
d Power5) Resistanc Temperat
e of pcb6) ure7)
TA
[°C]
IC
[mA]
PDC
[mW]
PRFout
[mW]
(dBm)
η
[%]
Pdiss
[mW]
RTHSA
[K/W]
TJ
[°C]
55
250
1250
500 (27)
40
750
45
110
Final stage 55
200
1000
250 (24)
25
750
45
110
High TA
85
120
600
50 (17)
8.5
550
20
110
Maximum
TA
105
50
250
100 (20)
40
150
30
110
Linear
55
150
750
50 (17)
7
700
50
110
Very Linear 55
250
1250
50 (17)
4
1200
20
110
Compressi
on
1
2
3
4
5
6
7
Is the operating case temperature respectively of the heatsink.
PDC = VCE* IC with VCE = 5 V.
RF power delivered to the load, PRFout = η * PDC.
Efficiency of the conversion from DC power to RF power, η = PRFout / PDC (collector efficiency).
Pdiss = PDC - PRFout. The RF output power PRFout delivered to the load reduces the power Pdiss to be
dissipated by the device. This means a good output match is recommended.
RTHSA is the thermal resistance of the pcb including heat sink, that is between the soldering point S and
the ambient A. Regard the impact of RTHSA on the junction temperature TJ, see below. The thermal design
of the pcb, respectively RTHSA, has to be adjusted to the intended operating mode.
TJ = TA + Pdiss * RTHJA. RTHJA = RTHJS + RTHSA. RTHJA is the thermal resistance between the transistor junction
J and the ambient A. RTHJS is the combined thermal resistance of die and package, which is 25 K/W for the
BFQ790,, see Chapter 3.
Preliminary Datasheet
4
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Thermal Characteristics
3
Table 4
Thermal Characteristics
Thermal Resistance
Parameter
Symbol
Values
Min.
Junction - soldering point
RthJS
–
Typ.
25
Unit
Note or Test Condition
K/W
–
Max.
–
Figure 1
Absolute Maximum Power Dissipation Pdiss,max vs. Ts
Note:
In the horizontal part of the derating curve the maximum power dissipation is given
by Pdiss,max ≈ VCE,max * IC,max. In this part the junction temperature TJ is lower than TJ,max. In the
declining slope it is TJ = TJ,max, Pdiss,max has to be reduced according to the curve in order not to
exceed TJ,max. It is TJ,max = TS + Pdiss,max * RTHJS.
Preliminary Datasheet
5
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
4
Electrical Performance in Test Fixture
4.1
DC Parameter Table
Table 5
DC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Unit
Note or Test Condition
Max.
Collector emitter breakdown voltage
V(BR)CEO
6.1
6.7
–
V
IC = 1 mA, open base
Collector emitter leakage current
ICES
–
–
1
0.1
401)
3
nA
μA
VCE = 8 V, VBE = 0 V
VCE = 18 V, VBE = 0 V
E-B short circuited
Collector base leakage current
ICBO
–
1
401)
nA
VCB = 8 V, IE = 0
Open emitter
Emitter base leakage current
IEBO
–
1
401)
μA
VEB = 0.5 V, IC = 0
Open collector
DC current gain
hFE
60
120
180
4.2
VCE = 5 V, IC = 250 mA
Pulse measured2)
AC Parameter Tables
Table 6
General AC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Unit
Note or Test Condition
Max.
Transition frequency
fT
–
20
–
GHz
VCE = 5 V, IC = 250 mA,
f = 0.5 GHz
Collector base capacitance
CCB
–
1.1
–
pF
VCB = 5 V, VBE = 0 V,
f = 1 MHz
Emitter grounded
Collector emitter capacitance
CCE
–
2.2
–
pF
VCE = 5 V, VBE = 0 V,
f = 1 MHz
Base grounded
Emitter base capacitance
CEB
–
9.4
–
pF
VEB = 0.5 V, VCB = 0 V,
f = 1 MHz
Collector grounded
1
2
Upper spec value limited by the cycle time of the 100% test.
Pulse width is 1 ms, duty cycle 10%. Regard that the current gain hFE depends on the junction temperature
TJ and TJ amongst others from the thermal resistance RTHSA of the pcb, see notes to Table 3. Hence the hFE
specified in this datasheet must not be the same as in the application. It is highly recommended to apply
circuit design techniques to make the collector current IC independent on the hFE production variation
and temperature effects.
Preliminary Datasheet
6
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
Measurement setup for the AC characteristics shown in Table 7 to Table 10 is a test fixture with Bias T’s and
tuners to adjust the source and load impedances in a 50 Ω system, TA = 25 °C.
Figure 2
BFQ790 Testing Circuit
Table 7
AC Characteristics, VCE = 5 V, f = 0.9 GHz
Parameter
Symbol
Values
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Linearity
1 dB compression point at output
3rd order intercept point at output
Table 8
Unit
Typ.
Note or Test Condition
Max.
dB
Gms
|S21|2
NFmin
OP1dB
OIP3
–
–
23
13
–
2.5
–
–
27
38.5
–
–
IC = 250 mA
IC = 250 mA
dB
ZS = ZSopt
IC = 70 mA
dBm
ZL = ZLopt
IC = 250 mA
IC = 250 mA
Unit
Note or Test Condition
–
–
–
AC Characteristics, VCE = 5 V, f = 1.8 GHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
18.5
7.5
–
–
Minimum Noise Figure
Minimum noise figure
NFmin
–
2.6
–
Linearity
1 dB compression point at output
3rd order intercept point at output
Preliminary Datasheet
dB
OP1dB
OIP3
–
–
27
38.5
7
–
–
IC = 250 mA
IC = 250 mA
dB
ZS = ZSopt
IC = 70 mA
dBm
ZL = ZLopt
IC = 250 mA
IC = 250 mA
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
Table 9
AC Characteristics, VCE = 5 V, f = 2.6 GHz
Parameter
Symbol
Values
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Linearity
1 dB compression point at output
3rd order intercept point at output
Table 10
Unit
Typ.
Note or Test Condition
Max.
dB
Gms
|S21|2
NFmin
OP1dB
OIP3
–
–
16
5.5
–
3.0
–
–
27
38.5
–
–
IC = 250 mA
IC = 250 mA
dB
ZS = ZSopt
IC = 70 mA
dBm
ZL = ZLopt
IC = 250 mA
IC = 250 mA
Unit
Note or Test Condition
–
–
–
AC Characteristics, VCE = 5 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Power Gain
Maximum power gain
Transducer gain
Typ.
Max.
dB
Gms
|S21|2
–
–
13
3
–
–
Minimum Noise Figure
Minimum noise figure
NFmin
–
3.4
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
27
38.5
–
–
Preliminary Datasheet
8
IC = 250 mA
IC = 250 mA
dB
ZS = ZSopt
IC = 70 mA
dBm
ZL = ZLopt
IC = 250 mA
IC = 250 mA
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
4.3
Characteristic DC Diagrams
500
6mA
450
5.25mA
400
4.5mA
350
3.75mA
3mA
250
2.25mA
C
I [mA]
300
200
1.5mA
150
0.75mA
100
50
0
0mA
0
1
2
3
4
5
6
7
VCE [V]
Figure 3
Collector Current IC vs. VCE, IB = Parameter
Note:
Regard absolute maximum ratings for IC, VCE and Pdiss
3
hFE
10
2
10
1
10
0
10
1
2
10
10
3
10
I [mA]
c
Figure 4
DC Current Gain hFE vs. IC at VCE = 5 V
Preliminary Datasheet
9
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
24
22
20
VCER[V]
18
16
14
12
10
8
6
1
10
2
10
3
4
10
R
10
[Ohm]
5
10
6
10
BE
Figure 5
Collector Emitter Breakdown Voltage BVCER vs. Resistor R_B/GND
Note:
The above figure shows the collector-emitter breakdown voltage BVCER with a resistor R_B/GND
between base and emitter. Only for very high R_B/GND values ("open base") the breakdown voltage is
as low as BVCEO (here 6.7 V). With decreasing R_B/GND values BVCER increases, e.g. at R_B/GND=10
kOhm to BVCER=10 V. In the application the biasing base resistance together with block capacitors
take over the function of R_B/GND and allows the RF voltage amplitude to swing up to voltages much
higher than BVCEO, no clipping occurs. Due to this effect the transistor can be biased at VCE=5 V and
still high RF output powers achieved, see the OP1dB values reported in Chapter 4.2.
Preliminary Datasheet
10
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
4.4
Characteristic AC Diagrams
25
fT [GHz]
20
3.00V
4.00V
5.00V
2.00V
15
10
5
1.00V
0.50V
0
Figure 6
0
100
200
300
IC [mA]
400
500
600
Transition Frequency fT vs. IC, VCE = Parameter
3
CCB [pF]
2.6
2.2
1.00V
1.8
2.00V
1.4
1
Figure 7
3.00V
4.00V
5.00V
0
100
200
300
IC [mA]
400
500
600
Collector Base Capacitance CCB vs. IC at f = 30 MHz, VCB = Parameter
Preliminary Datasheet
11
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
36
G
ms
33
30
27
G [dB]
24
21
18
G
ma
15
12
9
6
2
|S21|
3
0
Figure 8
0
1
2
3
f [GHz]
4
5
6
Gain Gms, Gma, IS21I2 vs. f at VCE = 5 V, IC = 250 mA
36
33
0.15GHz
30
Gmax [dB]
27
0.45GHz
24
0.90GHz
21
1.50GHz
1.80GHz
2.60GHz
18
15
3.50GHz
12
9
6
Figure 9
0
100
200
300
IC [mA]
400
500
600
Maximum Power Gain Gmax vs. IC at VCE = 5 V, f = Parameter
Preliminary Datasheet
12
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
36
33
0.15GHz
30
27
Gmax [dB]
0.45GHz
24
0.90GHz
21
1.50GHz
1.80GHz
18
2.60GHz
15
3.50GHz
12
9
6
0
1
2
3
4
V
CE
Figure 10
5
6
7
[V]
Maximum Power Gain Gmax vs. VCE at IC = 250 mA, f = Parameter
1
1.5
2
0.5
0.4
0.3
5.0
4.0
3
6.0
4
3.0
0.2
5
0.01 to 6 GHz
2.0
0.1
0.1
0
1.0
0.2 0.3 0.4 0.5
10
1
1.5
2
3
4 5
0.01
−0.1
−10
−5
−0.2
−4
−0.3
−3
−0.4
−2
−0.5
−1.5
70 mA
150 mA
200 mA
−1
250 mA
Figure 11
Output Reflection Coefficient S22 vs. f at VCE = 5 V, IC = Parameter
Preliminary Datasheet
13
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
1
1.5
0.5
2
4.0
5.0
0.4
3
3.0
0.3
6.0
4
0.2
5
0.01 to 6 GHz
2.0
0.1
10
0.1
0
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
0.01
1.0
−0.1
−10
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
70 mA
−2
150 mA
−1.5
200 mA
−1
250 mA
Figure 12
Input Reflection Coefficient S11 vs. f at VCE = 5 V, IC = Parameter
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.45
0.45 to 3.5 GHz
0.1
10
0.9
0.1
0
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
1.5
−0.1
−10
1.8
−0.2
−5
−4
2.6
−0.3
−3
3.0
−0.4
3.5
−0.5
−2
−1.5
−1
70 mA
150 mA
200 mA
250 mA
Figure 13
Source Impedance ZSopt for Minimum Noise Figure vs. f at VCE = 5V, IC = Parameter
Preliminary Datasheet
14
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
5
4.5
4
NFmin [dB]
3.5
3
2.5
IC = 250 mA
2
I = 200 mA
C
IC = 150 mA
1.5
1
Figure 14
IC = 70 mA
0
0.5
1
1.5
2
f [GHz]
2.5
3
3.5
4
Noise Figure NFmin vs. f at VCE = 5 V, ZS = ZSopt, IC = Parameter
5
4.5
4
NFmin [dB]
3.5
3
2.5
f = 3.5 GHz
f = 2.6 GHz
2
f = 1.8 GHz
f = 1.5 GHz
1.5
1
0
50
100
150
200
250
IC [mA]
Figure 15
Noise Figure NFmin vs. IC at VCE = 5 V, ZS = ZSopt, f = Parameter
Preliminary Datasheet
15
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
8
7.5
7
6.5
NF50 [dB]
6
5.5
5
4.5
f = 3.5 GHz
4
f = 2.6 GHz
3.5
f = 1.8 GHz
3
f = 1.5 GHz
2.5
2
0
50
100
150
200
250
IC [mA]
Figure 16
Noise Figure NF50 vs. IC at VCE = 5 V, ZS = 50 Ω, f = Parameter
1
1.5
2
0.5
0.4
3
0.3
4
21.3
0.2
24.3
0.1
0.1
0
5
23.4
26
0.2 26.5
0.3 0.4 0.5
10
1
25.2 23.9
1.5
2
3
4 5
27
−0.1
−10
25.6 24.7
−0.2
−5
23.4
−0.3
−4
21.3
−3
−0.4
−2
−0.5
−1.5
−1
Figure 17
Load Pull Contour OP1dB [dBm] at VCE = 5 V, IC = 250 mA, f = 0.9 GHz, ZI = Zopt
Preliminary Datasheet
16
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
1
1.5
0.5
2
0.4
3
0.3
32.5
0.2
4
0.1
10
35.7
0.1
0
5
34.7
0.2
0.3 0.4 0.5
37.9
1
37.4 36.3
1.5
2
3
4 5
38.5
−0.1
−10
36.8
−0.2
−5
35.2
−4
−0.3
−3
33
−0.4
−0.5
−2
−1.5
−1
Figure 18
Load Pull Contour OIP3 [dBm] at VCE = 5 V, IC = 250 mA, f = 0.9 GHz, ZI = Zopt
1
1.5
0.5
2
0.4
14.4
16
0.3
0.2
0.1
0.2
4
16.5
19
19.6
0.1
0
3
18
5
10
17
0.3 0.4 0.5
1
1.5
2
3
4 5
18.5
17.5
16.5
15.5
−0.1
−0.2
−10
−5
−4
−0.3
13.4
−3
−0.4
−0.5
−2
−1.5
−1
Figure 19
Load Pull Contour Gain G [dB] at VCE = 5 V, IC = 250 mA, f = 0.9 GHz, ZI = Zopt
Preliminary Datasheet
17
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
80
300
IP1dB
280
I
C
60
260
PAE
50
220
30
200
C
40
G
20
180
Pout
10
0
−20
160
−15
−10
−5
0
5
Pin [dBm]
10
15
140
20
Pout, Gain, IC, PAE vs. Pin at VCE = 5 V, ICq = 155 mA, f = 0.9 GHz, ZI = Zopt
60
290
IP1dB
40
280
30
G
20
270
PAE
Pout
10
C
Pout [dBm], Gain [dB], PAE [%]
50
I [mA]
Figure 20
240
I [mA]
Pout [dBm], Gain [dB], PAE [%]
70
I
C
0
260
−10
−20
−25
Figure 21
−20
−15
−10
−5
0
Pin [dBm]
5
10
250
15
Pout, Gain, IC, PAE vs. Pin at VCE = 5 V, ICq = 250 mA, f = 0.9 GHz, ZI = Zopt
Preliminary Datasheet
18
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Electrical Performance in Test Fixture
50
280
40
275
I
C
30
270
Pout
20
265
C
G
10
260
PAE
0
−10
−25
Figure 22
I [mA]
Pout [dBm], Gain [dB], PAE [%]
IP1dB
255
−20
−15
−10
−5
0
Pin [dBm]
5
10
250
15
Pout, Gain, IC, PAE vs. Pin at VCE = 5 V, ICq = 250 mA, f = 2.6 GHz, ZI = Zopt
39
38
OIP3 [dBm]
37
36
35
34
33
32
50
100
150
IC [mA]
200
250
Figure 23
OIP3 vs. IC at VCE = 5 V, f = 0.9 GHz, ZL = ZLopt
Note:
The curves shown in this chapter have been generated using typical devices but shall not be
understood as a guarantee that all devices have identical characteristic curves. TA = 25 °C.
Preliminary Datasheet
19
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Simulation Data
5
Simulation Data
For the BFQ790 a large signal model exists. It is a VBIC model, which is an advancement of the SPICE GummelPoon model. It covers properties of a power transistor which are not known by the standard SPICE GummelPoon model, such as self-heating, quasi-saturation and voltage breakdown. The VBIC model can be used in
standard simulation tools such as ADS and MWO as easily as the SPICE Gummel-Poon model. On the BFQ790
internet page the VBIC model is provided as a netlist. The model already contains the package parasitics and is
ready to use for DC and high frequency simulations. Besides the DC characteristics all S-parameters in
magnitude and phase, noise figure (including optimum source impedance and equivalent noise resistance),
intermodulation and compression have been extracted.
On the BFQ790 internet page you also find the S-parameters (including noise parameters) for linear simulation.
In any case please consult our website and download the latest versions before actually starting your design.
Preliminary Datasheet
20
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Package Information SOT89
6
Package Information SOT89
4.5 ±0.1
45˚
B
1.5 ±0.1
0.2 MAX.
2
+0.1
2.75 -0.15
3
1.5
0.35 ±0.1
+0.2
0.45 -0.1
3
0.15
M
B x3
0.2 B
1) Ejector pin markings possible
Figure 24
1.6 ±0.2
1±0.2
1
1)
0.15
4 ±0.25
1±0.1
1)
2.5±0.1
0.25 ±0.05
SOT89-PO V02
Package Outline (dimension in mm)
1.2
1.0
2.5
2.0
0.8
0.8
0.7
SOT89-FP V02
Figure 25
Package Footprint (dimension in mm)
Figure 26
Marking Example (marking BFQ790: R3)
Pin 1
4.3
12
4.6
8
1.6
SOT89-TP V02
Figure 27
Tape Dimensions (dimension in mm)
Preliminary Datasheet
21
Revision 2.0
2017-02-16
BFQ790
High Linearity RF Medium Power Amplifier
Revision History
Revision History
Major changes since previous revision
Revision History
Reference
Description
Revision History: 2014-08-26, Revision 2.0
Preliminary datasheet based on measurements of engineering samples, replaces target
datasheet.
...
Preliminary Datasheet
22
Revision 2.0
2017-02-16
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™,
DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™,
HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™,
PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™,
SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™.
Trademarks Update 2015-12-22
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2017-02-16
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2017 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-hws1468299808712
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values
stated herein and/or any information regarding the
application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities of
any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury
